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| MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. 1 GND 8 7 6 Unit:mm FEATURES * Low voltage * High gain * High efficiency * High power 3.5V 20.5B 50% 30.5dBm 2 3 4 5 GND 10.0 APPLICATION PDC1.5GHz 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 GND 4 VD2 5 RF OUTPUT 6 GND 7 GND 8 VG1,2 tolerance:0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operating case temp Storage temp Condition Tc=25C, Po30.5dBm Tc=25C, ZG=ZL=50 Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm C C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25C) Symbol f Pin IDt in ACP50 ACP100 2fo 3fo Parameter Frequency Input power Total drain current Return loss 50kHz adjacent channel power 100kHz adjacent channel power 2nd harmonics 3rd harmonics Test conditions Min 1429 - - - - - - - Limits Typ - (7) 640 - - - - - Max 1453 10 720 -6 -47 -62 -30 -30 Unit MHz dBm mA dB dBc dBc dBc dBc PO=30.5dBm VD1=VD2=3.5V VG1,2=-2.5V ZG=ZL=50 (/4DQPSK) Ditto (CW) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 1 PO,ACP vs Pin 35 VG=-2.5V VD=3.5V f=1441MHz PO ACP-50K 25 -50 25 -30 35 VG=-2.5V VD=3.5V f=1441MHz PO 700 IDt 600 500 20 ACP-100K 15 -5 0 5 10 -70 15 15 -5 0 5 10 -60 20 400 300 200 15 PO,IDt vs Pin 1000 900 800 30 -40 30 Pin(dBm) Pin(dBm) Pin, ACP vs f 10 -20 VG=-2.5V VD=3.5V PO=30.5dBm(AVG) Pin 10 Pin, IDt vs f 1000 VG=-2.5V 9 VD=3.5V PO=30.5dBm(AVG) 8 7 -40 6 5 -50 4 3 IDt 600 700 800 -30 Pin 900 5 ACP-50k ACP-100k -60 2 1 0 1405 1417 1429 1441 1453 1465 -70 1477 0 1405 1417 1429 1441 1453 1465 500 1477 f(MHz) f(MHz) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 2 Gain, ACP vs VD 25 VG=-2.5V f=1453MHz PO=30.5dBm 800 0 Gain -10 -20 -30 -40 15 ACP(+50kHz) ACP(-100kHz) 10 3.0 ACP(+100kHz) 3.2 3.4 3.6 3.8 ACP(-50kHz) -50 -60 -70 4.0 500 3.0 600 700 VG=-2.5V f=1453MHz PO=30.5dBm IDt vs VD 20 3.2 3.4 3.6 3.8 4.0 VD(V) VD(V) EQUIVALENT CIRCUIT 1ST GATE 2ND GATE 1ST DRAIN 2ND DRAIN RF INPUT MATCHING CIRCUIT MATCHING CIRCUIT MATCHING CIRCUIT RF OUTPUT GND Nov. 97 |
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